Photovoltaic sensing of a memristor based in LSMO/BTO/ITO ferroionic tunnel junctions

Memristors based on oxide tunnel junctions are promising candidates for energy efficient neuromorphic computing. However, the low power sensing of nonvolatile resistive state is an important challenge. We report optically induced a memristor La0.7Sr0.3MnO3/BaTiO3/In2O3:SnO2 (90:10) heterostructure with 3 nm thick BaTiO3 ferroelectric barrier. The memristive response originates from modulation interfacial Schottky barrier at La0.7Sr0.3MnO3/BaTiO3 interface, yielding robust intermediate states. produces photovoltaic when illuminated 3.3 eV UV LED, which depends state. open circuit voltage Voc correlates linearly resistance each state, enabling active light densities as 20 mW/cm2 and temperatures up to 100 K. This opens avenues minimally invasive readout memory states in hybrid devices.